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TYPICAL PERFORMANCE CURVES (R)
APT75GP120JDQ3 1200V
APT75GP120JDQ3
POWER MOS 7 IGBT
(R)
E G C
E
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * 50 kHz operation @ 800V, 20A * 20 kHz operation @ 800V, 44A * RBSOA Rated
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT75GP120JDQ3 UNIT Volts
1200 20 128 57 300 300A @ 960V 543 -55 to 150 300
Amps
@ TC = 150C
Reverse Bias Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1250A) Gate Threshold Voltage (VCE = VGE, I C = 2.5mA, Tj = 25C) MIN TYP MAX Units
1200 3 4.5 3.3 3.0 1250
2
6 3.9
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
2
Volts
I CES I GES
Gate-Emitter Leakage Current (VGE = 20V)
100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-7458
APT Website - http://www.advancedpower.com
Rev A
10-2005
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C)
A
5500
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT75GP120JDQ3
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 75A TJ = 150C, R G = 5, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC
7035 460 80 7.5 320 50 140 300 20 40 165 55 1620 4100 2500 20 40 245 115 1620 5850 4820 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 960V Inductive Switching (25C) VCC = 600V VGE = 15V I C = 75A RG = 5
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V I C = 75A RG = 5
J
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT VIsolation Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 MIN TYP MAX UNIT C/W gm Volts
.23 .56 29.2
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.)
10-2005
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7458
Rev A
TYPICAL PERFORMANCE CURVES
160 140 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0
V = 15V GE 250s PULSE TEST <0.5 % DUTY CYCLE
160 140 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0
APT75GP120JDQ3
V = 10V GE 250s PULSE TEST <0.5 % DUTY CYCLE
TJ = 25C TJ = 125C
TJ = 25C TJ = 125C
250
FIGURE 1, Output Characteristics(TJ = 25C)
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 75A C T = 25C
J
0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
200
VCE = 240V VCE = 600V
150 TJ = -55C TJ = 25C TJ = 125C
8 6 4 2 0
100
VCE = 960V
50
0
0
234 56 78 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
1
0
50
100 150 200 250 GATE CHARGE (nC) FIGURE 4, Gate Charge
300
350
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IC = 150A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
5.0
4
4.0
IC = 150A IC = 75A
IC = 75A
3
3.0
IC = 37.5A
2
IC = 37.5A
2.0
1
1.0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
0
6
25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
180
0
0
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
160 140 120 100 80 60 40 20 10-2005 050-7458 Rev A
1.05
1.00
0.95
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90 -50
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
0 -50
30 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
350 300 250 200 150 100 50 VCE = 600V RG = 5
VGE =15V,TJ=25C VGE =15V,TJ=125C
APT75GP120JDQ3
VGE = 15V 20
10
VCE = 600V TJ = 25C, TJ =125C RG = 5 L = 100 H
20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
100
RG = 5, L = 100H, VCE = 600V
0
0
20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
160 140
RG = 5, L = 100H, VCE = 600V
0
L = 100 H
0
80 tf, FALL TIME (ns) tr, RISE TIME (ns)
TJ = 125C, VGE = 15V
120 100 80 60 40
TJ = 25 or 125C,VGE = 15V
60
40
20
20 0
TJ = 25C, VGE = 15V
0 20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
15000 EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
V = 600V CE V = +15V GE R = 5
G
0
0 20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
12000 10000 8000 6000 4000 2000 0
V = 600V CE V = +15V GE R = 5
G
TJ = 125C,VGE =15V
TJ = 125C, VGE = 15V
10000
5000
TJ = 25C,VGE =15V
TJ = 25C, VGE = 15V
0 20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
20000 SWITCHING ENERGY LOSSES (J)
V = 600V CE V = +15V GE T = 125C
J
0
0 20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
15000
SWITCHING ENERGY LOSSES (J)
V = 600V CE V = +15V GE R = 5
G
Eon2,150A Eoff,150A
Eon2,150A
12500 10000 7500 5000 2500 0
15000
10000
Eon2,75A
Eoff,150A Eon2,75A Eon2,37.5A Eoff,37.5A
10-2005
5000
Eon2,37.5A
Eoff,75A Eoff,37.5A
Eoff,75A
Rev A
050-7458
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
20,000 1,000 500 C, CAPACITANCE ( F)
P
350 Cies IC, COLLECTOR CURRENT (A) 300 250 200 150 100 50
APT75GP120JDQ3
100 50 Coes
10
Cres
0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 200 400 600 800 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.25 0.9 0.20 0.7 0.15 0.5 0.10
Note:
ZJC, THERMAL IMPEDANCE (C/W)
PDM
0.3
t1 t2
0.05
0.1 0.05
SINGLE PULSE 10-4
0
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-5
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
50 FMAX, OPERATING FREQUENCY (kHz)
RC MODEL Junction temp (C) 0.0221 0.0014
10 5
Power (watts)
0.0498
0.0416
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
T = 125C J T = 75C C D = 50 % V = XXXV CE R = 5
G
F
fmax2 = Pdiss =
0.158 Case temperature (C)
0.543
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
35 50 60 80 95 110 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
20
050-7458
Rev A
10-2005
APT75GP120JDQ3
APT60DQ120
10%
Gate Voltage TJ = 125C td(on)
V CC
IC
V CE
tr Collector Current 5% Collector Voltage
A D.U.T.
5%
Switching Energy
90% 10%
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST *DRIVER SAME TYPE AS D.U.T.
90%
Gate Voltage
td(off) 90%
tf
Collector Voltage
TJ = 125C
A V CE 100uH IC V CLAMP A B
10%
Switching Energy
0
Collector Current
DRIVER*
D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
050-7458
Rev A
10-2005
TYPICAL PERFORMANCE CURVES
APT75GP120JDQ3
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 105C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 75A Forward Voltage IF = 150A IF = 75A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT75GP120JDQ3 UNIT Amps
60 88 540
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.8 3.48 2.17
MIN TYP MAXUNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.60 ZJC, THERMAL IMPEDANCE (C/W) 0.50 0.40 0.30 0.20 0.10 0 0.9
60 265 560 5 350 2890 13 150 4720 40 -
IF = 60A, diF/dt = -200A/s VR = 800V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 60A, diF/dt = -200A/s VR = 800V, TC = 125C
IF = 60A, diF/dt = -1000A/s VR = 800V, TC = 125C
-
0.7
0.5
Note:
PDM
0.3 0.1 0.05 10-5 10-4
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Junction temp. (C) RC MODEL
0.148
0.006
0.238
0.0910
Case temperature. (C)
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7458
0.174
0.524
Rev A
Power (watts)
10-2005
200 trr, REVERSE RECOVERY TIME (ns) 180 IF, FORWARD CURRENT (A) 160 140 120 100 80 60 40 20 0 0 TJ = 175C TJ = 125C TJ = 25C TJ = -55C
400 350 300 250 200 150 100 50 120A
APT75GP120JDQ3
T = 125C J V = 800V
R
60A 30A
1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage 7000 Qrr, REVERSE RECOVERY CHARGE (nC) 6000 5000 4000 3000 2000 1000 0 30A
T = 125C J V = 800V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 27. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 50 45 40 35 30 25 20 15 10 5 0
T = 125C J V = 800V
R
0
120A
120A
60A
60A
30A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 0.4 Qrr 0.2 0.0 trr Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 29. Reverse Recovery Current vs. Current Rate of Change 100 90 80 70 IF(AV) (A) 60 50 40 30 20 10
Duty cycle = 0.5 T = 175C
J
trr
IRRM
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 30. Dynamic Parameters vs. Junction Temperature 350 CJ, JUNCTION CAPACITANCE (pF) 300 250 200 150 100 50 10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 31. Maximum Average Forward Current vs. CaseTemperature
0
25
50
050-7458
Rev A
10-2005
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT10035LLL
APT75GP120JDQ3
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 33. Diode Test Circui t
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 34, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5 ,045,903 5 ,089,434 5 ,182,234 5 ,019,522
,503,786 5 ,256,583 4 ,748,103 5 ,283,202 5 ,231,474 5 ,434,095 5 ,528,058 and foreign patents. US and Foreign patents pending. A Rights Reserved. ll 5,262,336 6
050-7458
Rev A
10-2005
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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